Terahertz Emission and Ultrafast Carrier Dynamics of Ar-Ion Implanted Cu(In,Ga)Se2 Thin Films

We investigated THz emission from Ar-ion-implanted Cu(In,Ga)Se2 (CIGS) films. radiation the CIGS films increases as density of implanted Ar ions increases. This is because contribute to an increase in surface surge current density. The effect Ar-ion implantation on carrier dynamics was also using optical pump probe spectroscopy. fitted results imply that charge transition intra-and carrier–carrier scattering lifetimes and decrease bandgap lifetime.